IPP60R160C6 datasheet(4/18 Pages) INFINEON

Part #	IPP60R160C6

Description	Metal Oxide Semiconductor Field Effect Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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600V CoolMOS" C6 Power Transistor

IPx60R160C6

Maximum ratings

Final Data Sheet

4

Rev. 2.1, 2010-02-09

2

Maximum ratings

at Tj = 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current1)

1) Limited by T

j,max. Maximum duty cycle D=0.75

ID

-

23.8

A

TC= 25 °C

15

TC= 100°C

Pulsed drain current2)

2) Pulse width tp limited by Tj,max

ID,pulse

-

70

A

TC=25 °C

Avalanche energy, single pulse

EAS

-

497

mJ

ID=4.1 A,VDD=50 V

(see table 21)

Avalanche energy, repetitive

EAR

-

0.75

ID=4.1 A,VDD=50 V

Avalanche current, repetitive

IAR

-

4.1

A

MOSFET dv/dt ruggedness

dv/dt

-

50

V/ns

VDS=0...480 V

Gate source voltage

VGS

-20

-

20

V

static

-30

30

AC (f>1 Hz)

Power dissipation for

TO-220, TO-247, TO-263

Ptot

-

176

W

TC=25 °C

Power dissipation for

TO-220 FullPAK

Ptot

-

34

Operating and storage temperature

Tj,Tstg

-55

-

150

°C

Mounting torque

TO-220, TO-247

-

60

Ncm

M3 and M3.5 screws

Mounting torque

TO-220 FullPAK

50

M2.5 screws

Continuous diode forward current

IS

-

20.6

A

TC=25 °C

Diode pulse current2)

IS,pulse

-

70

A

TC=25 °C

Reverse diode dv/dt3)

3) Identical low side and high side switch with identical RG

dv/dt

-

15

V/ns

VDS=0...400 V,ISD

" ID,

Tj=25 °C

Maximum diode commutation

speed3)

dif/dt

500

A/µs

Rev. 2.2, 2014-12-02

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