IPW60R160C6 datasheet(7/18 Pages) INFINEON

Part #	IPW60R160C6

Description	Metal Oxide Semiconductor Field Effect Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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600V CoolMOS" C6 Power Transistor

IPx60R160C6

Electrical characteristics

Final Data Sheet

7

Rev. 2.1, 2010-02-09

Table 8

Gate charge characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Gate to source charge

Qgs

-

9

-

nC

VDD=480 V,

ID=11.3 A,

VGS=0 to 10 V

Gate to drain charge

Qgd

-

38

-

Gate charge total

Qg

-

75

-

Gate plateau voltage

Vplateau

-

5.4

-

V

Table 9

Reverse diode characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode forward voltage

VSD

-

0.9

-

V

VGS=0 V, IF=11.3 A,

Tj=25 °C

Reverse recovery time

trr

-

460

-

ns

VR=400 V, IF=11.3 A,

di

F/dt=100 A/µs

(see table 22)

Reverse recovery charge

Qrr

-

8.2

-

µC

Peak reverse recovery current

Irrm

-

35

-

A

Rev. 2.2, 2014-12-02

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