drain

pin 2

gate

pin 1

source

pin 3

600V CoolMOS

™ C6 Power Transistor

IPD60R950C6, IPB60R950C6

IPP60R950C6, IPA60R950C6

FinalData Sheet

2

Rev. 2.2, 2014-12-10

1

Description

CoolMOS

™ is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle and

pioneered by Infineon Technologies. CoolMOS

™ C6 series combines the

experience of the leading SJ MOSFET supplier with high class innovation.

The resulting devices provide all benefits of a fast switching SJ MOSFET

while not sacrificing ease of use. Extremely low switching and conduction

losses make switching applications even more efficient, more compact,

lighter, and cooler.

Features

•

•

Very high commutation ruggedness

•

Easy to use/drive

•

•

Pb-free plating, Halogen free mold compound

Applications

PFC stages, hard switching PWM stages and resonant switching PWM

stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,

Telecom and UPS.

Please note: For MOSFET paralleling the use of ferrite beads on the gate

or separate totem poles is generally recommended.

1) J-STD20 and JESD22

Table 1

Key Performance Parameters

Parameter

Value

Unit

650

V

0.95

"

13

nC

12

A

1.3

µJ

500

A/µs

Type / Ordering Code

Package

Marking

Related Links

IPD60R950C6

PG-TO252

!

IFX C6 Product Brief

IPB60R950C6

PG-TO263

!

IFX C6 Portfolio

IPP60R950C6

PG-TO220

6R950C6

!

IFX CoolMOS Webpage

IPA60R950C6

PG-TO220 FullPAK

!

IFX Design tools