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SKB02N120 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # SKB02N120
Description  Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SKB02N120 Datasheet(HTML) 6 Page - Infineon Technologies AG

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SKB02N120
6
Rev. 2.4
12.06.2013
0A
2A
4A
6A
8A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
0
50
100
150
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150C,
VCE = 800V, VGE = +15V/0V, RG = 9 1,
dynamic test circuit in Fig.E )
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150C,
VCE = 800V, VGE = +15V/0V, IC = 2A,
dynamic test circuit in Fig.E)
-50°C
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
typ.
min.
max.
Tj, JUNCTION TEMPERATURE
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 2A, RG = 91,
dynamic test circuit in Fig.E )
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)


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