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CAV24C512YE-GT3 Datasheet(PDF) 2 Page - ON Semiconductor |
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CAV24C512YE-GT3 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 13 page CAV24C512 www.onsemi.com 2 SOIC−8 (W) TSSOP−8 (Y) MARKING DIAGRAMS 24512A = Specific Device Code A = Assembly Location Code Y = Production Year (Last Digit) M = Production Month (1−9, O, N, D) XXX = Last Three Digits of = Assembly Lot Number G = Pb−Free Microdot 24512A AYMXXX C12A AYMXXX C12A = Specific Device Code A = Assembly Location Code Y = Production Year (Last Digit) M = Production Month (1−9, O, N, D) XXX = Last Three Digits of = Assembly Lot Number G = Pb−Free Microdot G G C9L ALL YM G C9L = Specific Device Code A = Assembly Location Code LL = Assembly Lot Y = Year M = Month G = Pb−Free Package UDFN−8 (HU5) C9A = Specific Device Code A = Assembly Location Y = Year W = Work Week C9A AYW WLCSP−8 (C8A) Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature –65 to +150 °C Voltage on any Pin with Respect to Ground (Note 1) –0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units NEND (Notes 3, 4) Endurance 1,000,000 Program/Erase Cycles TDR Data Retention 100 Years 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100 and JEDEC test methods. 3. Page Mode, VCC = 5 V, 25°C. 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified. Symbol Parameter Test Conditions Min Max Units ICCR Read Current Read, fSCL = 400 kHz/1 MHz 1 mA ICCW Write Current VCC = 5.5 V 2.5 mA ISB Standby Current All I/O Pins at GND or VCC TA = −40°C to +125°C 5 mA IL I/O Pin Leakage Pin at GND or VCC TA = −40°C to +125°C 2 mA VIL1 Input Low Voltage −0.5 0.3 VCC V VIH1 Input High Voltage 0.7 VCC VCC + 0.5 V VOL1 Output Low Voltage IOL = 3.0 mA 0.4 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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