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MP6901 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. MP6901
Description  High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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MP6901 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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MP6901
2002-11-20
1
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1)
MP6901
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
· Package with heat sink isolated to lead (SIP 12 pin)
· High collector power dissipation (6 devices operation)
: PT = 5 W (Ta = 25°C)
· High collector current: IC (DC) = ±4 A (max)
· High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Maximum Ratings (Ta = 25°C)
Rating
Characteristics
Symbol
NPN
PNP
Unit
Collector-base voltage
VCBO
100
−100
V
Collector-emitter voltage
VCEO
80
−80
V
Emitter-base voltage
VEBO
5
−5
V
IC
4
−4
Collector current
ICP
6
−6
A
Continuous base current
IB
0.4
−0.4
A
Collector power dissipation
(1 device operation)
PC
3.0
W
Ta = 25°C
5.0
Collector power
dissipation
(6 devices operation)
Tc = 25°C
PT
25
W
Isolation voltage
VIsol
1000
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32B1D
Weight: 6.0 g (typ.)
3
2
1
R1 R2
6
4
9
11
R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω
8
4
7
10
12
R1 R2


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