IHW20N120R3_1501 datasheet(11/15 Pages) INFINEON

Part #	IHW20N120R3_1501

Description	Reverse conducting IGBT with monolithic body diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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11

IHW20N120R3

ResonantSwitchingSeries

Rev.2.6,2015-01-26

Figure 17.

Typicalgatecharge

(IC=20A)

QGE,GATECHARGE[nC]

0

40

80

120

160

200

0.0

2.5

5.0

7.5

10.0

12.5

15.0

240V

960V

Figure 18.

Typicalcapacitanceasafunctionof

collector-emittervoltage

(VGE=0V,f=1MHz)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

0

10

20

30

10

100

1000

Cies

Coes

Cres

Figure 19.

IGBTtransientthermalimpedance

(D=tp/T)

tp,PULSEWIDTH[s]

1E-6

1E-5

1E-4

0.001

0.01

0.1

1

0.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:

ri[K/W]:

τi[s]:

1

9.8E-3

2.8E-5

2

0.01407993

4.7E-5

3

0.0698

2.0E-4

4

0.1158

1.2E-3

5

0.1569

9.9E-3

6

0.1137

0.08835259

Figure 20.

Diodetransientthermalimpedanceasa

functionofpulsewidth

(D=tp/T)

tp,PULSEWIDTH[s]

1E-6

1E-5

1E-4

0.001

0.01

0.1

1

0.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:

ri[K/W]:

τi[s]:

1

9.8E-3

2.8E-5

2

0.0141

4.7E-5

3

0.0698

2.0E-4

4

0.1158

1.2E-3

5

0.1569

9.9E-3

6

0.1137

0.08835259

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IHW20N120R3_1501 Datasheet(PDF) 11 Page - Infineon Technologies AG

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