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IKP08N65H5 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IKP08N65H5 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 17 page 2 IKP08N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters G C E G C E C KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IKP08N65H5 650V 8A 1.65V 175°C K08EEH5 PG-TO220-3 |
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