IGW25N120H3_14 datasheet(11/16 Pages) INFINEON

Part #	IGW25N120H3

Description	IGW25N120H3

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Manufacturer	INFINEON [Infineon Technologies AG]

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11 / 16 page

10a

IGW25N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-02-27

Figure 1.

Typicalswitchingenergylossesasafunction

ofcollectorcurrent

(ind.load,Tj=125°C,VCE=800V,VGE=15/0V,

rG=3Ω,DiodeIDH15S120)

IC,COLLECTORCURRENT[A]

0

5

10

15

20

25

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Eoff

Eon

Ets

Figure 2.

Typicalswitchingenergylossesasafunction

ofgateresistor

(ind.load,Tj=125°C,VCE=800V,VGE=15/0V,

IC=10A,DiodeIDH15S120)

rG,GATERESISTOR[Ω]

0

5

10

15

20

25

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Eoff

Eon

Ets

Figure 3.

Typicalswitchingenergylossesasafunction

ofjunctiontemperature

(indload,VCE=800V,VGE=15/0V,IC=10A,

rG=3Ω,DiodeIDH15S120)

Tj,JUNCTIONTEMPERATURE[°C]

25

50

75

100

125

0.0

0.2

0.4

0.6

0.8

Eoff

Eon

Ets

Figure 4.

Typicalswitchingenergylossesasafunction

ofcollectoremittervoltage

(ind.load,Tj=125°C,VGE=15/0V,IC=10A,

rG=3Ω,DiodeIDH15S120)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

400

500

600

700

800

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Eoff

Eon

Ets

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