50N06 datasheet(1/2 Pages) CHONGQING

Part #	50N06

Description	50A mps,60 Volts N-CHANNEL MOSFET

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Manufacturer	CHONGQING [Chongqing Pingwei Enterprise co.,Ltd]

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Rev. 14-1

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50N06(F,B,H)

50A mps,60 Volts N-CHANNEL MOSFET

FEATURE



50A,60V,RDS(ON)=16mΩ@VGS=10V/25A



Low gate charge



Low Ciss



Fast switching



100% avalanche tested



Improved dv/dt capability

TO-220AB

ITO-220AB

50N06

50N06F

TO-263

TO-262

50N06B

50N06H

Absolute Maximum Ratings(TC=25℃,unless otherwise noted)

Parameter

Symbol

50N06

UNIT

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

Continuous Drain Current

ID

52.4

A

Pulsed Drain Current(Note1)

IDM

210

Single Pulse Avalanche Energy (Note 2)

EAS

990

mJ

Avalanche Current(Note1)

IAR

52.4

A

Repetitive Avalanche Energy (Note1)

EAR

12

mJ

Reverse Diode dV/dt (Note 3)

dv/dt

7.0

V/ns

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

℃

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

TL

260

℃

Mounting Torque

6-32 or M3 screw

10

lbf·in

1.1

N·m

Thermal Characteristics

Parameter

Symbol

ITO-220

TO-220

TO-262

TO-263

Units

Maximum Junction-to-Case

RthJC

1.66

0.83

℃

/W

Maximum Power Dissipation

TC=25℃

PD

75

150

W

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50N06 Datasheet(PDF) 1 Page - Chongqing Pingwei Enterprise co.,Ltd

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