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6N60B Datasheet(PDF) 2 Page - Chongqing Pingwei Enterprise co.,Ltd |
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6N60B Datasheet(HTML) 2 Page - Chongqing Pingwei Enterprise co.,Ltd |
2 / 2 page - 页码 - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Mix Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 600 - - V Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Reference to 25℃, ID=250uA - 0.53 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=600V,VGS=0V - - 1 uA Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V - - 10 uA Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V - - -10 uA On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2 - 4 V Drain-Source On-State Resistance RDS(on) VGS=10V,ID=3A - - 1.2 Ω Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ - - 1123 pF Output Capacitance Coss - - 112 pF Reverse Transfer Capacitance Crss - - 21 pF Switching Characteristics Turn-On Delay Time td(on) VDD=300V,ID=6A, RG=25Ω (Note4,5) - 20 - ns Turn-On Rise Time tr - 70 - ns Turn-Off Delay Time td(off) - 40 - ns Turn-Off Fall Time tf - 45 - ns Total Gate Charge Qg VDS=480V,ID=6A, VGS=10V, (Note4,5) - 22 - nC Gate-Source Charge Qgs - 4.9 - nC Gate-Drain Charge Qgd - 9.4 - nC Drain-Source Body Diode Charcteristics and Maximum Ratings Continuous Diode Forward Current IS - - 6.0 A Pulsed Diode Forward Current ISM - - 24 A Diode Forward Voltage VSD IS=6A,VGS=0V - - 1.4 V Reverse Recovery Time trr VGS=0V,IS=6A, dIF/dt=100A/us, (Note4) - 290 - ns Reverse Recovery Charge Qrr - 2.35 - uC Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=50V,starling,L=24mH,Rg=25Ω,IAS=6A , TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃. 4. Pulse width≤300us;duty cycle≤2%. 5. Repetitive rating; pulse width limited by maximum junction temperature. |
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