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IGW50N65F5 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IGW50N65F5 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 14 page 6 IGW50N65F5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-04 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) - 20 - ns Rise time tr - 15 - ns Turn-off delay time td(off) - 202 - ns Fall time tf - 3 - ns Turn-on energy Eon - 0.68 - mJ Turn-off energy Eoff - 0.21 - mJ Total switching energy Ets - 0.89 - mJ Tvj=150°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0 Ω,RG(off)=12.0Ω, L σ=30nH,Cσ=30pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-on delay time td(on) - 18 - ns Rise time tr - 5 - ns Turn-off delay time td(off) - 245 - ns Fall time tf - 12 - ns Turn-on energy Eon - 0.18 - mJ Turn-off energy Eoff - 0.06 - mJ Total switching energy Ets - 0.24 - mJ Tvj=150°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, RG(on)=12.0 Ω,RG(off)=12.0Ω, L σ=30nH,Cσ=30pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. |
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