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IGW50N65H5 Datasheet(PDF) 11 Page - Infineon Technologies AG |
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IGW50N65H5 Datasheet(HTML) 11 Page - Infineon Technologies AG |
11 / 14 page 11 IGW50N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 5 10 15 20 25 30 1 10 100 1000 1E+4 Cies Coes Cres Figure 18. IGBTtransientthermalresistance (D=tp/T) tp,PULSEWIDTH[s] 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: ri[K/W]: τi[s]: 1 0.1621884 8.6E-4 2 0.2278266 0.01112208 3 0.109985 0.09568113 |
Similar Part No. - IGW50N65H5_15 |
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Similar Description - IGW50N65H5_15 |
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