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BFR92P Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFR92P Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2013-11-21 1 BFR92P Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 45 mA Base current IB 4 Total power dissipation1) TS ≤ 93 °C Ptot 280 mW Junction temperature TJ 150 °C Storage temperature TStg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 205 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) |
Similar Part No. - BFR92P_13 |
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Similar Description - BFR92P_13 |
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