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NLAS7213MUTBG Datasheet(PDF) 3 Page - ON Semiconductor

Part # NLAS7213MUTBG
Description  High-Speed USB 2.0 DPST Switch
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NLAS7213MUTBG Datasheet(HTML) 3 Page - ON Semiconductor

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NLAS7213
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
CONTROL INPUT (Typical: T = 25
°C, VCC = 3.3 V)
Symbol
Pins
Parameter
Test Conditions
VCC (V)
−40
°C to +85°C
Unit
Min
Typ
Max
VIH
OE
Control Input HIGH Voltage
2.7
3.3
4.2
1.3
1.3
1.4
V
VIL
OE
Control Input LOW Voltage
2.7
3.3
4.2
0.4
0.4
0.4
V
IIN
OE
Control Input Leakage Current
VIS = GND
1.65 − 4.5
±1.0
mA
SUPPLY CURRENT AND LEAKAGE (Typical: T = 25
°C, VCC = 3.3 V, VIN = VCC or GND)
Symbol
Pins
Parameter
Test Conditions
VCC (V)
−40
°C to +85°C
Unit
Min
Typ
Max
ICC
VCC
Quiescent Supply Current
VIS = VCC or GND; ID = 0 A
1.65 − 4.5
1.0
mA
INC(OFF)
HSD+,
HSD−
OFF State Leakage Current
VCOM = 3.6 V, VNC = 1.0 V
1.65 − 4.5
±1.0
mA
IOFF
Power OFF Leakage Current
VIS = GND
0
±1.0
mA
ON RESISTANCE (Typical: T = 25
°C, VCC = 3.3 V)
Symbol
Pins
Parameter
Test Conditions
VCC (V)
−40
°C to +85°C
Unit
Min
Typ
Max
RON
On−Resistance
ION = −8 mA
VIS = 0 to 0.4 V
2.7
3.3
4.2
9.0
8.0
7.2
9.5
8.5
7.5
W
RFLAT
On−Resistance Flatness
ION = −8 mA
VIS = 0 to 0.4 V
2.7
3.3
4.2
0.8
0.5
0.3
W
DRON
On−Resistance Matching
ION = −8 mA
VIS = 0 to 0.4 V
2.7
3.3
4.2
0.07
0.07
0.04
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.


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