NLAS4717EP_11 datasheet(1/10 Pages) ONSEMI

Part #	NLAS4717EP

Description	4.5 High Bandwidth, Dual SPDT Analog Switch

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Manufacturer	ONSEMI [ON Semiconductor]

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 Semiconductor Components Industries, LLC, 2011

October, 2011 − Rev. 7

1

Publication Order Number:

NLAS4717EP/D

NLAS4717EP

4.5

W High Bandwidth, Dual

SPDT Analog Switch

The NLAS4717EP is an advanced CMOS analog switch fabricated

in sub−micron silicon gate CMOS technology. The device is a dual

independent Single Pole Double Throw (SPDT) switch featuring low

RDS(on) of 4.5 W at 3.0 V.

The device also features guaranteed Break−Before−Make (BBM)

switching, assuring the switches never short the driver.

The NLAS4717EP is available in two small size packages:



Microbump: 2.0 x 1.5 mm



WQFN−10:

1.4 x 1.8 mm

Features

 Low RDS(on): 4.5 W @ 3.0 V

 Matching Between the Switches 0.5 W

 Wide Voltage Range: 1.8 V to 5.5 V

 High Bandwidth > 90 MHz

 1.65 V to 5.5 V Operating Range

 Low Threshold Voltages on Pins 4 and 8 (CTRL Pins)

 Ultra−Low Charge Injection  6.0 pC

 Low Standby Current: ICC = 1.0 nA (Max) @ TA = 25C

 *OVT on Pins 4 and 8 (CTRL Logic Pins)

 These are Pb−Free Devices

Typical Applications

 Cell Phones

 PDAs

 MP3s

 Digital Still Cameras

 USB 2.0 Full Speed (USB1.1) − 12 Mbps Compliant

Important Information

 ESD Protection:



Human Body Model (HBM) = 2500 V,



Machine Model (MM) = 200 V

 Latchup Max Rating: 200 mA (Per JEDEC EIA/JESD78)

 Pin−to−Pin Compatible with MAX4717

*OVT

 Overvoltage Tolerant (OVT) specific pins operate higher than normal

supply voltages, with no damage to the devices or to signal integrity.

http://onsemi.com

FUNCTION TABLE

0

1

IN_

Microbump−10

CASE 489AA

MARKING

DIAGRAMS

NO_

NC_

OFF

ON

OFF

A1

A

= Assembly Location

Y

= Year

W, WW = Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

Device

Package

Shipping†

ORDERING INFORMATION

NLAS4717EPFCT1G Microbump−10

(Pb−Free)

3000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NLAS4717EPMTR2G

WQFN−10

(Pb−Free)

3000 /

Tape & Reel

WQFN−10

CASE 488AQ

A1

4717EP

AYWWG

G

1

AWMG

G

AW

= Specific Device Code

M

= Date Code

G

= Pb−Free Device

(Note: Microdot may be in either location)

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ON Semiconductor	NLAS4717EPFCT1G	88Kb / 10P	4.5 ohm High Bandwidth, Dual SPDT Analog Switch March, 2006 ??Rev. 5
ON Semiconductor	NLAS4717EPMTR2G	88Kb / 10P	4.5 ohm High Bandwidth, Dual SPDT Analog Switch March, 2006 ??Rev. 5

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