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NLAS3799BMNR2G Datasheet(PDF) 1 Page - ON Semiconductor |
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NLAS3799BMNR2G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 12 page © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 3 1 Publication Order Number: NLAS3799B/D NLAS3799B, NLAS3799BL Dual DPDT Ultra-Low RON Switch The NLAS3799B is an ultra−low RON dual DPDT and a 0.5 W RON analog switch. This device is designed for low operating voltage, high current switching of speaker output and earpiece for cellphone applications. It can switch a balanced stereo output. The NLAS3799B can handle a balanced microphone/speaker/ring−tone generator in a monophone mode. The device contains a break−before−make (BBM) feature. Features • Single Supply Operation 1.65 to 4.5 V VCC Function Directly from LiON Battery • Maximum Breakdown Voltage: 5.5 V • Low Static Power • NLAS3799B Interfaces with 2.8 V Chipset NLAS3799BL Interfaces with 1.8 V Chipset • These are Pb−Free Devices Typical Applications • Cell Phone Speaker/Microphone Switching • Ringtone−Chip/Amplifier Switching • Four Unbalanced (Single−Ended) Switches • Stereo Balanced (Push−Pull) Switching Important Information • ESD Protection: Human Body Model (HBM) > 8000 V Machine Model (MM) > 400 V • Continuous Current Rating Through each Switch ±300 mA • Conforms to: JEDEC MO−220, Issue H, Variation VEED−6 • Package: ♦ 1.8 x 2.6 x 0.75 mm WQFN−16 Pb−Free ♦ 1.8 x 2.6 x 0.55 mm UQFN−16 Pb−Free WQFN−16 CASE 488AP MARKING DIAGRAMS See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. ORDERING INFORMATION 16 XXMG G 1 XX = Specific Device Code AK = NLAS3799BMNR2G AL = NLAS3799BLMNR2G AX = NLAS3799BMUR2G M = Date Code/Assembly Location http://onsemi.com 4 1 16 13 9 12 58 14 7 15 6 310 211 COMA NOA Vcc NCD NCB GND NOCCOMC NCC C−D IN NOD COMD COMB NOB A−B IN NCA 1 1 UQFN−16 CASE 488AU G = Pb−Free Package (Note: Microdot may be in either location) 16 XXMG G 1 |
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