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IDT71V3556S Datasheet(PDF) 2 Page - Integrated Device Technology

Part No. IDT71V3556S
Description  128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs
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Maker  IDT [Integrated Device Technology]
Homepage  http://www.idt.com
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IDT71V3556S Datasheet(HTML) 2 Page - Integrated Device Technology

 
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IDT71V3556, IDT71V3558, 128K x 36, 256K x 18, 3.3V Synchronous SRAMS with
ZBT
™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Pin Definition(1)
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
Symbol
Pin Function
I/O
Active
Description
A0-A17
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a combination of the rising edge of CLK,
ADV/
LD low, CEN low, and true chip enables.
ADV/
LD
Advance / Load
I
N/A
ADV/
LD is a synchronous input that is used to load the internal registers with new address and control when it
is sampled low at the rising edge of clock with the chip selected. When ADV/
LD is low with the chip
deselected, any burst in progress is terminated. When ADV/
LD is sampled high then the internal burst counter
is advanced for any burst that was in progress. The external addresses are ignored when ADV/
LD is sampled
high.
R/
W
Read / Write
I
N/A
R/
W signal is a synchronous input that identifies whether the current load cycle initiated is a Read or Write
access to the memory array. The data bus activity for the current cycle takes place two clock cycles later.
CEN
Clock Enable
I
LOW
Sync hronous Clock Enable Input. When
CEN is sampled high, all other synchronous inputs, including clock are
ignored and outputs remain unchanged. The effect of
CEN sampled high on the device outputs is as if the low
to high clock transition did not occur. For normal operation,
CEN must be sampled low at rising edge of clock.
BW1-BW4
Individual Byte
Write Enables
ILOW
Synchronous byte write enables. Each 9-bit b yte has its own active low byte write enable. On load write cycles
(When R/
W and ADV/LD are sampled low) the appropriate byte write signal (BW1-BW4) must be valid. The byte
write signal must also be valid on each cycle of a burst write. Byte Write signals are ignored when R/
W is
sampled high. The appropriate byte(s) of data are written into the de vice two cycles later.
BW1-BW4 can all be
tied low if always doing write to the entire 36-bit word.
CE1, CE2
Chip Enables
I
LOW
S ynchronous active low chip enable.
CE1 and CE2 are used with CE2 to enable the IDT71V3556/58. (CE1 or
CE2 sampled high or CE2 sampled low) and ADV/LD low at the rising edge of clock, initiates a deselect cycle.
The ZBT
TM has a two cycle deselect, i.e., the data bus will tri-state two clo ck cycles after deselect is initiated.
CE2
Chip Enable
I
HIGH
Sync hronous active high chip enable. CE2 is used with
CE1 and CE2 to enable the chip. CE2 has inverted
polarity but otherwise identical to
CE1 and CE2.
CLK
Clock
I
N/A
This is the clock input to the IDT71V3556/58. Except for
OE, all timing references for the device are made with
respect to the rising edge of CLK.
I/O0-I/O31
I/OP1-I/OP4
Data Input/Output
I/O
N/A
Synchronous data input/output (I/O) pins . Both the data input path and data output path are registered and
triggered by the rising edge of CLK.
LBO
Linear Burst Order
I
LOW
Burst order selection input. When
LBO is high the Interleaved burst sequence is selected. When LBO is low
the Linear burst sequence is selected.
LBO is a static input and it must not change during device operation.
OE
Output Enable
I
LOW
Asynchronous output enable.
OE must be low to read data from the 71V3556/58. When OE is high the I/O pins
are in a high-impedance state.
OE does not need to be actively controlled for read and write cycles. In normal
operation,
OE can be tied low.
TMS
Test Mode Select
I
N/A
Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal pullup.
TDI
Test Data Input
I
N/A
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an internal
pullup.
TCK
Test Clock
I
N/A
Clock input of TAP controller. Each TAP event is clocked. Test inputs are captured o n rising edge of TCK,
while test outputs are d riven from the falling edge of TCK. This pin has an internal pullup.
TDO
Test Data Output
O
N/A
Serial output of registers placed between TDI and TDO. This output is active depending on the state of the TAP
controller.
TRST
JTAG Reset
(Optional)
ILOW
Optional Asynchronous JTAG reset. Can be used to reset the TAP controller, but not required. JTAG reset
occurs automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not used
TRST can
be left floating. This pin has an internal pullup. Only available in BGA package.
ZZ
Sleep Mode
I
HIGH
Synchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71V3556/3558 to
its lowest power consumption level. Data retention is guaranteed in Sleep Mode. This pin has an internal
pulldown.
VDD
Power Supply
N/A
N/A
3.3V core power supply.
VDDQ
Power Supply
N/A
N/A
3.3V I/O Supply.
VSS
Ground
N/A
N/A
Ground.
5281 tbl 02
The IDT71V3556/58 has an on-chip burst counter. In the burst
mode, the IDT71V3556/58 can provide four cycles of data for a single
address presented to the SRAM. The order of the burst sequence is
defined by the
LBO input pin. The LBO pin selects between linear and
interleaved burst sequence. The ADV/
LD signal is used to load a new
externaladdress(ADV/
LD=LOW)orincrementtheinternalburstcounter
(ADV/
LD = HIGH).
The IDT71V3556/58 SRAMs utilize IDT's latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
Description continued


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