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FGL60N100BNTD Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FGL60N100BNTD
Description  NPT-Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGL60N100BNTD Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. A
IGBT
FGL60N100BNTD
NPT-Trench IGBT
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
FGL60N100BNTD
Units
VCES
Collector-Emitter Voltage
1000
V
VGES
Gate-Emitter Voltage
± 25
V
IC
Collector Current
@ TC = 25°C60
A
Collector Current
@ TC = 100°C42
A
ICM (1)
Pulsed Collector Current
120
A
IF
Diode Continuous Forward Current
@ TC = 100°C15
A
PD
Maximum Power Dissipation
@ TC = 25°C
180
W
Maximum Power Dissipation
@ TC = 100°C72
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
--
0.69
°C/W
RθJC(DIODE)
Thermal Resistance, Junction-to-Case
--
2.08
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
25
°C/W
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
G C
E
TO-264
G
C
E
G
C
E


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