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SSN1N45B Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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SSN1N45B Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  Rev. A, November 2002 ©2002 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 75mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 0.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. a) Reference point of the R θJL is the drain lead b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment (R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RθCA is determined by the user’s board design) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 450 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 450 V, VGS = 0 V -- -- 10 µA VDS = 360 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 50 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -50 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.3 3.0 3.7 V VDS = VGS, ID = 250 mA 3.5 4.2 4.9 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.25 A -- 3.4 4.25 Ω gFS Forward Transconductance VDS = 50 V, ID = 0.25 A -- 0.7 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 185 240 pF Coss Output Capacitance -- 29 40 pF Crss Reverse Transfer Capacitance -- 6.5 8.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 225 V, ID = 0.5 A, RG = 25 Ω (Note 4,5) -- 7.5 25 ns tr Turn-On Rise Time -- 21 50 ns td(off) Turn-Off Delay Time -- 23 55 ns tf Turn-Off Fall Time -- 36 80 ns Qg Total Gate Charge VDS = 360 V, ID = 0.5 A, VGS = 10 V (Note 4,5) -- 6.5 8.5 nC Qgs Gate-Source Charge -- 0.9 -- nC Qgd Gate-Drain Charge -- 3.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 0.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 4.0 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 0.5 A, dIF / dt = 100 A/µs (Note 4) -- 102 -- ns Qrr Reverse Recovery Charge -- 0.26 -- µC |
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