SSN1N45B datasheet(4/8 Pages) FAIRCHILD

Part #	SSN1N45B

Description	450V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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4 / 8 page

Rev. A, November 2002

10

0

10

1

10

2

10

3

10

-3

10

-2

10

-1

10

0

10

1

10 ms

100 ms

1 s

100

µs

DC

1 ms

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

o

C

2. T

J = 150

o

C

3. Single Pulse

V

DS

, Drain-Source Voltage [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

-1

10

0

10

1

10

2

※ No te s :

1 . Z

θ JL(t) = 5 0

℃ /W M a x .

2 . D u ty F a c t o r , D = t

1 /t 2

3 . T

JM - T L = P DM * Z θ JL(t )

s i ngl e p u ls e

D= 0 . 5

0. 02

0. 2

0. 05

0. 1

0. 01

t

1 , S qua r e W a v e

P u ls e D u r a t ion [ s ec ]

25

50

75

100

125

150

0.0

0.1

0.2

0.3

0.4

0.5

0.6

T

C, Case Temperature [

℃]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 0.25 A

T

J, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS = 0 V

2. I

D = 250

μ A

T

J, Junction Temperature [

o

C]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

t1

P

DM

t2

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