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CAT5140ZI-00-GT3 Datasheet(PDF) 3 Page - ON Semiconductor

Part # CAT5140ZI-00-GT3
Description  Single Channel 256 Tap Digital Potentiometer (POT)
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT5140ZI-00-GT3 Datasheet(HTML) 3 Page - ON Semiconductor

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Table 5. POTENTIOMETER CHARACTERISTICS (Note 3) (VCC = +2.5 V to +5.5 V, −40_C to +85_C unless otherwise specified.)
Parameter
Test Conditions
Symbol
Limits
Units
Min
Typ
Max
Potentiometer Resistance ‘−50’
RPOT
50
kW
Potentiometer Resistance ‘−00’
RPOT
100
kW
Potentiometer Resistance Tolerance
20
%
Power Rating
25C
50
mW
Wiper Current
IW
3
mA
Wiper Resistance
IW = 3 mA
VCC = 3.3 V
RW
70
200
W
Integral Non-Linearity
Voltage Divider Mode
INL
1
LSB (Note 4)
Differential Non-Linearity
DNL
0.5
LSB (Note 4)
Integral Non-Linearity
Resistor Mode
RINL
1
LSB (Note 4)
Differential Non-Linearity
RDNL
0.5
LSB (Note 4)
Voltage on RH or RL
VSS = 0 V
VTERM
VSS
VCC
V
Resolution
0.4
%
Zero Scale Error
0
0.5
2
LSB (Note 5)
Full Scale Error
−2
−0.5
0
LSB (Note 5)
Temperature Coefficient of RPOT
(Notes 6, 7)
TCRPOT
100
ppm/C
Ratiometric Temp. Coefficient
(Notes 6, 7)
TCRATIO
20
ppm/C
Potentiometer Capacitances
(Notes 6, 7)
CH/CL/CW
10/10/25
pF
Frequency Response
RPOT = 50 kW (Note 8)
fc
0.4
MHz
3. Latch-up protection is provided for stresses up to 100 mA on address and data pins from −1 V to VCC +1 V.
4. LSB = RTOT / 255 or (RH − RL) / 255, single pot.
5. V(RW)255−V(RW)0]/255 (RW)255 = 0xFF, (RW)0 = 0x00.
6. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
potentiometer.
7. Relative linearity is a measure of the error in step size. It is determined by the actual change in voltage between two successive tap positions
when used as a potentiometer.
8. This parameter is tested initially and after a design or process change that affects the parameter.
Table 6. D.C. OPERATING CHARACTERISTICS (VCC = +2.5 V to +5.5 V, −40C to +85C unless otherwise specified.)
Parameter
Test Conditions
Symbol
Min
Max
Units
Power Supply Current
Volatile Write & Read
fSCL = 400 kHz
VCC = 5.5 V, Inputs = GND
ICC1
1
mA
Power Supply Current
Non-volatile Write
fSCL = 400 kHz
VCC = 5.5 V, Inputs = GND
ICC2
3
mA
Standby Current
VCC = 5.0 V
ISB
2
mA
Input Leakage Current
VIN = GND to VCC
ILI
−10
+10
mA
Output Leakage Current
VOUT = GND to VCC
ILO
10
mA
Input Low Voltage
VIL
−1
VCC x 0.3
V
Input High Voltage
VIH
VCC x 0.7
VCC + 1.0
V
SDA Output Buffer Low Voltage
VCC = 2.5 V, IOL = 4 mA
VOL1
0.4
V
Power-On Recall
Minimum VCC for memory recall
VPOR
1.4
2.0
V


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