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AOS2182471 Datasheet(PDF) 1 Page - Cree, Inc |
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AOS2182471 Datasheet(HTML) 1 Page - Cree, Inc |
1 / 2 page CREE Silicon Carbide MOSFET Evaluation Kit KIT8020CRD8FF1217P-1 Features: Includes all the power stage parts needed to quickly assemble a CREE MOSFET and diode based power converter and get started with SiC devices. Easy to use assembly to evaluate CREE MOSFET and Diode performance in a half bridge circuit. Easily configurable to different power conversion topologies such as Buck or Boost configurations. Easy access to critical test points for measurement including VGS, VDS and IDS. Good layout example for properly driving MOSFET and diode with minimal ringing. Gate drive schematic and layout reference for a TO-247 packaged CREE MOSFET. Comparative testing between CREE devices and IGBTs. Description: This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that includes isolated gate drivers and power supplies and all the other components needed to quickly assemble the half bridge power stage . The basic block diagram and specifications are shown below. The assembly can be easily configured for several topologies from the basic phase-leg configuration to several other common topologies as shown in the next section. Additional topologies like H-bridge and 3-phase inverter are possible with two or more of the evaluation kits. Evaluation Board details 900V max. 10kW /w a cooling fan > 300 kHz +12V aux supply 2 input PWM channels Some assembly Required 1 Subject to change without notice. www.cree.com |
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