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BFP196W Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. BFP196W
Description  Low Noise Silicon Bipolar RF Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP196W Datasheet(HTML) 1 Page - Infineon Technologies AG

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2014-04-04
1
BFP196W
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
• Power amplifier for DECT and PCN systems
• fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD
(Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP196W
RIs
1 = E 2 = C 3 = E 4 = B -
-
SOT343
Maximum Ratings
at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
150
mA
Base current
IB
15
Total power dissipation1)
TS ≤ 69°C
Ptot
700
mW
Junction temperature
TJ
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
TStg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
115
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)


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