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BFP196W Datasheet(PDF) 3 Page - Infineon Technologies AG

Part No. BFP196W
Description  Low Noise Silicon Bipolar RF Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP196W Datasheet(HTML) 3 Page - Infineon Technologies AG

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2014-04-04
3
BFP196W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 70 mA, VCE = 8 V, f = 500 MHz
fT
5
7.5
-
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb
-
0.86
1.3
pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
-
0.4
-
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
-
3.9
-
Minimum noise figure
IC = 20 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
f = 1.8 GHz
NFmin
-
-
1.3
2.3
-
-
dB
Power gain, maximum available1)
IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
19
12.5
-
-
Transducer gain
IC = 50 mA, VCE = 8 V, ZS = ZL = 50Ω,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
13
7
-
-
dB
Third order intercept point at output2)
IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 0.9 GHz
IP3
-
32
-
dBm
1dB Compression point at output
IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 0.9 GHz
P-1dB
-
19
-
1Gma = |S21 / S12| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω from 0.2 MHz to 12 GHz


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