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BD42530EFJ-C Datasheet(PDF) 18 Page - Rohm |
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BD42530EFJ-C Datasheet(HTML) 18 Page - Rohm |
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18 / 29 page  Datasheet Datasheet 18/25 BD42530xxx-C Series © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 www.rohm.com TSZ02201-0G7G0AN00550-1-2 20.Apr.2016 Rev.001 Application Examples ・ Applying positive surge to the VCC If the possibility exists that surges higher than 45 V will be applied to the VCC, a Zener Diode should be placed between the VCC and GND as shown in the figure below. ・ Applying negative surge to the VCC If the possibility exists that negative surges lower than the GND are applied to the VCC, a Shottky Diode should be place between the VCC and GND as shown in the figure below. ・ Implementing a Protection Diode If the possibility exists that a large inductive load is connected to the output pin resulting in back-EMF at time of startup and shutdown, a protection diode should be placed as shown in the figure below. ・ Reverse Polarity Protection Diode In some applications, the VCC and pin potential might be reversed, possibly resulting in damage to internal circuit or damage to the element. In instance, when VCC shorts to GND while external capacitor at VO is charged. Reverse current in case of point A described in below diagram can be prevented by inserting Reverse polarity protection diode in series to the VCC. When a short of the point B and the GND is concerned after having reverse polarity protection diode inserted, we recommend inserting a bypass diode between the VCC and the VO. If the reverse polarity protection diode and bypass diode cannot be inserted due to any reasons, use a capacitor with a capacitance with less than 1000μF at VADJ / EN = 5V and 100μF at VADJ / EN = 16V to avoid damage to the internal circuits or the elements. VCC VO GND |
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