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BD3531F Datasheet(PDF) 9 Page - Rohm |
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BD3531F Datasheet(HTML) 9 Page - Rohm |
9 / 19 page BD3531F 9/15 © 2015 ROHM Co., Ltd. All rights reserved. www.rohm.com TSZ22111・15・001 TSZ02201-0J2J0A900950-1-2 02.Nov.2015 Rev.001 2. Power Dissipation In thermal design, consider the temperature range wherein the IC is guaranteed to operate and apply appropriate margins. The temperature conditions that need to be considered are listed below: (1) Ambient temperature Ta: 100°C or lower (2) Chip junction temperature Tj: 150°C or lower The chip ’s junction temperature Tj can be considered as follows. (See the diagrams below for θja.) Most heat loss in BD3531F occurs at the output N-channel FET. The lost power is determined by multiplying the voltage between IN and OUT by the output current. Since this IC is packaged for high-power applications, its thermal derating characteristics significantly depend on the PCB. So when designing, the size of the PCB to be used should be carefully considered. Power dissipation (W) = {Input voltage (VVTT_IN) – Output voltage (VVTT=1/2VVDDQ)} x IOUT (Ave) For instance, VVTT_IN = 1.8V, VVDDQ=1.8V, and IOUT (Ave)=0.5A The power dissipation is determined as follows: W 4 . 0 A 5 . 0 V 9 . 0 V 8 . 1 W n dissipatio Power ◎SOP8 (1) 70mm x 70mm x 1.6mm Glass-epoxy PCB θj-c=181°C/W (2) With no heat sink θj-a=222°C/W Ambient Temperature [Ta] 100°C 100 0.6 0 25 75 125 150 50 0.2 0.1 0 [°C] 0.4 0.5 0.3 [W] (2) 0.56W (1) 0.69W 0.7 |
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