PTFA080551FV4R0 datasheet(9/11 Pages) INFINEON

Part #	PTFA080551FV4R0

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

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9 / 11 page

Data Sheet

9 of 11

Rev. 04.1, 2016-06-16

PTFA080551E

PTFA080551F

Confidential, Limited Internal Distribution

CL

L

C

D

G

S

0.0381 [.0015] -A-

2X 7.11

[.280]

LID

10.16±.25

[.400±.010]

15.49±.51

[.610±.020]

FLANGE

9.78

[.385]

15.23

[.600]

4X R1.52

[R.060]

2X R1.52

[R.060]

45° X 2.03

[.080]

2.66±.51

[.105±.020]

20.31

[.800]

10.16±.25

[.400±.010]

3.61±.38

[.142±.015]

SPH 1.57

[.062]

6.

ALL FOUR

CORNERS

4X R0.63

[R.025] MAX

C66065-A2326-C001-01-0027 H-36265-2.dwg

3.05

[.120]

1.02

[.040]

Diagram Notes—unless otherwise specified:

1.

Interpret dimensions and tolerances per ASME Y14.5M-1994.

2.

Primary dimensions are mm. Alternate dimensions are inches.

3.

All tolerances ± 0.127 [.005] unless specified otherwise.

4.

Pins: D = drain, S = source, G = gate.

5.

Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

6.

Exposed metal plane on top and bottom of ceramic insulator.

7.

Gold plating thickness:

S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]

Package Outline Specifications

Package H-36265-2

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PTFA080551FV4R0 Datasheet(PDF) 9 Page - Infineon Technologies AG

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