PTFA080551F datasheet(5/11 Pages) INFINEON

Part #	PTFA080551F

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

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5 / 11 page

Data Sheet

5 of 11

Rev. 04.1, 2016-06-16

PTFA080551E

PTFA080551F

Confidential, Limited Internal Distribution

Bias Voltage vs. Temperature

Voltage normalized to typical gate voltage,

series show current

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

-20

0

20

40

60

80

100

Case Temperature (°C)

0.778 A

1.55 A

3.11 A

3.88 A

4.66 A

5.44 A

6.22 A

7.00 A

IS-95 CDMA Performance

VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz

0

5

10

15

20

25

30

35

40

45

29

31

33

35

37

39

41

43

Output Power, Avg. (dBm)

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

Efficiency

ACPR FC + 1.98 MHz

ACP FC – 0.75 MHz

TCASE = 25°C

TCASE = 90°C

Output Power (P–1dB) vs. Drain Voltage

IDQ = 600 mA, ƒ = 960 MHz

45

46

47

48

49

50

51

24

26

28

30

32

Drain Voltage (V)

Typical Performance (cont.)

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