Data Sheet

1 of 10

Rev. 03.1, 20016-06-21

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PTFA091201E

PTFA091201F

Confidential, Limited Internal Distribution

Description

The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs

designed for ultra-linear GSM/EDGE power amplifier applications in

the 920 to 960 MHz band. Features include input and output matching,

and thermally-enhanced packages with slotted or earless flanges.

Manufactured with Infineon's advanced LDMOS process, these

devices provide excellent thermal performance and superior

reliability.

PTFA091201E

Package H-36248-2

Thermally-Enhanced High Power RF LDMOS FETs

120 W, 920 – 960 MHz

EDGE Modulation Spectrum Performance

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

36

38

40

42

44

46

48

50

Output Power, Avg. (dBm)

10

15

20

25

30

35

40

45

50

55

Efficiency

400 kHz

600 kHz

RF Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Error Vector Magnitude

EVM (RMS)

—

2.5

—

%

Modulation Spectrum @ 400 kHz

ACPR

—

–62

—

dBc

Modulation Spectrum @ 600 kHz

ACPR

—

–74

—

dBc

Gain

—

19

—

dB

Drain Efficiency

—

44

—

%

PTFA091201F

Package H-37248-2

Features

• Thermally-enhanced packages

• Broadband internal matching

• Typical EDGE performance

- Average output power = 50 W

- Gain = 19.0 dB

- Efficiency = 44%

• Typical CW performance

- Output power at P–1dB = 135 W

- Gain = 18.0 dB

- Efficiency = 64%

• Integrated ESD protection: Human Body Model,

Class 2 (minimum)

• Pb-free and RoHS compliant

• Excellent thermal stability, low HCI drift

• Capable of handling 10:1 VSWR @ 28 V,

120 W (CW) output power

*See Infineon distributor for future availability.