PTFB090901EAV2R0XTMA1 datasheet(4/14 Pages) INFINEON

Part #	PTFB090901EAV2R0XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 14 page

PTFB090901EA

PTFB090901FA

Data Sheet

4 of 14

Rev. 05.2, 2016-06-09

30

40

50

60

-35

-25

Two-tone Drive-up

VDD = 28 V, IDQ = 650 mA,

ƒ1 = 960 MHz, ƒ2 = 959 MHz

3rd Order IMD

0

10

20

-55

-45

33

36

39

42

45

48

51

Output Power, PEP (dBm)

Efficiency

b090901 gr 8

Typical Performance (cont.)

30

40

50

60

70

18

19

20

21

22

CW Power Sweep

VDD = 30 V, IDQ = 650 mA, ƒ = 960 MHz

Gain

Effi i

0

10

20

30

15

16

17

18

34

38

42

46

50

Output Power, Avg. (dBm)

Efficiency

b090901 gr 7

-30

-20

-10

0

30

40

50

60

Single-carrier WCDMA Broadband

VDD = 28 V, IDQ = 620 mA, POUT = 28 W,

3GPP WCDMA signal

IML3

Efficiency

IRL

-50

-40

10

20

810

855

900

945

990

1035 1080

Frequency (MHz)

Gain

b090901 gr 6

30

40

50

60

19

20

21

22

Two-tone Drive-up

VDD = 30 V, IDQ = 650 mA,

ƒ1 = 960 MHz, ƒ2 = 959 MHz

Gain

Efficiency

0

10

20

16

17

18

33

36

39

42

45

48

51

Output Power, PEP (dBm)

y

b090901 gr 9

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PTFB090901EAV2R0XTMA1 Datasheet(PDF) 4 Page - Infineon Technologies AG

PTFB090901EAV2R0XTMA1 Datasheet(HTML) 4 Page - Infineon Technologies AG

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