PTFA092201E

PTFA092201F

Data Sheet

1 of 11

Rev. 03.2, 2016-06-21

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Description

The PTFA092201E and PTFA092201F are 220-watt, internally-

matched LDMOS FETs intended for EDGE and WCDMA applications

in the 920 to 960 MHz band. Manufactured with Infineon's advanced

LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTFA092201E

Package H-36260-2

Thermally-Enhanced High Power RF LDMOS FETs

220 W, 920 – 960 MHz

2-Carrier WCDMA Performance

signal, P/A R = 8.1 dB, 10 MHz carrier spacing,

3.84 MHz bandwidth

0

10

20

30

40

50

60

30

35

40

45

50

Output Power, Avg. (dBm)

-60

-55

-50

-45

-40

-35

-30

IMD

ACPR

Gain

Efficiency

RF Characteristics

fixture)

Characteristic

Symbol

Min

Typ

Max

Unit

Intermodulation Distortion

IMD

—

–37

—

dBc

Gain

—

18.5

—

dB

Drain Efficiency

—

30

—

%

PTFA092201F

Package H-37260-2

Features

• Pb-free, RoHS-compliant and thermally-enhanced

packages

• Broadband internal matching

• Typical two-carrier WCDMA performance at

960 MHz, 30 V

- Average output power = 55 W

- Linear Gain = 18.5 dB

- Efficiency = 30%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –39 dBc

• Typical CW performance, 960 MHz, 30 V

- Output power at P–1dB = 250 W

- Gain = 17.5 dB

- Efficiency = 59%

• Integrated ESD protection: Human Body Model,

Class 2 (minimum)

• Excellent thermal stability, low HCI drift

• Capable of handling 10:1 VSWR @ 30 V,

220 W (CW) output power

*See Infineon distributor for future availability.