PTFB192503ELV1R250XTMA1 datasheet(1/15 Pages) INFINEON

Part #	PTFB192503ELV1R250XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

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All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 15

Rev. 09.1, 2016-06-13

PTFB192503EL

PTFB192503FL

RF Characteristics

Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test

fixture)

VDD = 30 V, IDQ = 1.9 A, POUT = 50 W average, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 8:1 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

—

19

—

dB

Drain Efficiency

hD

—

28

—

%

Intermodulation Distortion

IMD

—

–35

—

dBc

Thermally-Enhanced High Power RF LDMOS FETs

240 W, 1930 – 1990 MHz

Description

The PTFB192503EL and PTFB192503FL are 240-watt LDMOS

FETs intended for use in multi-standard cellular power amplifier

applications in the 1930 to 1990 MHz frequency band. Features

include input and output matching, high gain, wide signal

bandwidth and reduced memory effects for improved DPD

correctability. Manufactured with Infineon's advanced LDMOS

process, these devices provide excellent thermal performance

and superior reliability.

PTFB192503EL

Package H-33288-6

Features

• Broadbandinternalinputandoutputmatching

• EnhancedforuseinDPDerrorcorrectionsystems

• Typicaltwo-carrierWCDMAperformance,30V,

1990 MHz

- Average output power = 50 W

- Linear gain = 19 dB

- Drain efficiency = 28 %

- Intermodulation distortion = –35 dBc

• TypicalCWperformance,1990MHz,30V

- Output power at P1dB = 240 W

- Efficiency = 55%

• Increasednegativegate-sourcevoltagerangefor

improved performance in Doherty peaking

amplifiers

• IntegratedESDprotection.HumanBodyModel,

Class 2 (minimum)

• Capableofhandling10:1VSWR@30V,240W

(CW) output power

• Pb-free,RoHS-compliant

PTFB192503FL

Package H-34288-4/2

0

10

20

30

40

50

15

16

17

18

19

20

33

35

37

39

41

43

45

47

49

Output Power (dBm)

Two-carrier WCDMA 3GPP

VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz

3GPP WCDMA, PAR = 8:1,

10 MHz carrier spacing BW 3.84MHz

Efficiency

Gain

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PTFB192503ELV1R250XTMA1 Datasheet(PDF) 1 Page - Infineon Technologies AG

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