PTFB181702FCV1R0XTMA1 datasheet(3/8 Pages) INFINEON

Part #	PTFB181702FCV1R0XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FET

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 8 page

PTFB181702FC

Data Sheet

3 of 8

Rev. 02.1, 2016-06-10

Typical Performance (datatakeninaproductiontestfixture)

-40

-35

-30

-25

-20

-15

-10

-16

-14

-12

-10

-8

-6

-4

1690 1730 1770 1810 1850 1890 1930 1970

Frequency (MHz)

Single-carrier Broadband Performance

VDD = 28 V, IDQ = 1.3 A, POUT = 80 W,

3GPP WCDMA signal, PAR = 10 dB

Return Loss

ACPR

b181702fc-g3

42

43

44

45

46

47

48

15

16

17

18

19

20

21

1690 1730 1770 1810 1850 1890 1930 1970

Frequency (MHz)

Single-carrier Broadband Performance

VDD = 28 V, IDQ = 1.3 A, POUT = 80 W,

3GPP WCDMA signal, PAR = 10 dB

Gain

Efficiency

b181702fc-g2

-80

-70

-60

-50

-40

-30

-20

38

41

43

46

48

51

53

Output Power, PEP (dBm)

Two-tone Intermodulation Distortion

vs. Output Power

VDD = 28 V, IDQ = 1.3 A,

ƒ1 = 1880 MHz, ƒ2 = 1879 MHz

IM3

IM7

IM5

b181702fc-g5

-55

-50

-45

-40

-35

-30

-25

-20

-15

34 36 38 40 42 44 46 48 50 52

Output Power (dBm)

Two-carrier WCDMA Drive-up

VDD = 28 V, IDQ = 1.3 A,

3GPP WCDMA signal, PAR = 8 dB,

10 MHz carrier spacing, BW 3.84 MHz

1880 Lower

1880 Upper

1842.5 Lower

1842.5 Upper

1805 Lower

1805 Upper

b181702fc-g1

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PTFB181702FCV1R0XTMA1 Datasheet(PDF) 3 Page - Infineon Technologies AG

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