PTFB093608FVV2 datasheet(3/13 Pages) INFINEON

Part #	PTFB093608FVV2

Description	Thermally-Enhanced High Power RF LDMOS FET

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTFB093608FV

Data Sheet

3 of 13

Rev. 04, 2012-07-24

Typical Performance (data taken in a production test fixture)

0

10

20

30

40

50

-70

-60

-50

-40

-30

-20

34

38

42

46

50

54

Output Power Avg. (dBm)

Single-carrier WCDMA 3GPP Drive-up

VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz

3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz

Efficiency

ACP Low

ACP Up

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

36

38

40

42

44

46

48

50

52

54

Output Power Avg. (dBm)

Single-carrier WCDMA 3GPP Drive-up

VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz

3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz

ACP Low

PAR @ .01% CCDF

Efficiency

Gain

-30

-20

-10

0

18

19

20

21

860 880 900 920 940 960 980 1000 1020

Frequency (MHz)

Single-carrier WCDMA Broadband

Gain & Return Loss vs. Frequency

VDD = 28 V, IDQ = 2.8 A, POUT = 100 W

Gain

IRL

-40

-35

-30

-25

-20

22

27

32

37

42

860

880

900

920

940

960

980 1000

Frequency (MHz)

Single-carrier WCDMA Broadband

Efficiency & ACPR vs. Frequency

VDD = 28 V, IDQ = 2.8 A, POUT = 100 W

Efficiency

ACPU

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PTFB093608FVV2 Datasheet(PDF) 3 Page - Infineon Technologies AG

PTFB093608FVV2 Datasheet(HTML) 3 Page - Infineon Technologies AG

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