PTFB211501EV1R0XTMA1 datasheet(5/13 Pages) INFINEON

Part #	PTFB211501EV1R0XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTFB211501E

PTFB211501F

Data Sheet

5 of 13

Rev. 03.1, 2016-06-14

Intermodulation Distortion

vs. Output Power

VDD = 30 V, IDQ = 1.20 A,

ƒ1 = 2170 MHz, ƒ2 = 2169 MHz

-60

-50

-40

-30

-20

40

45

50

55

Output Power, PEP (dBm)

3rd Order

7th

5th

Typical Performance (cont.)

Bias Voltage vs. Temperature

Voltage normalized to typical gate voltage,

series show current

0.97

0.98

0.99

1

1.01

1.02

1.03

-20

0

20

40

60

80

100

Case Temperature (°C)

2 A

4 A

8 A

10 A

12 A

14 A

16 A

Z Source

Z Load

G

S

D

Broadband Circuit Impedance

0.1

0.3

0.2

Z Source

Z Load

2080 MHz

2200 MHz

Z0 = 50 Ω

Frequency

Z Source

Ω

Z Load

Ω

MHz

R

jX

R

jX

2200

4.29

–8.14

1.49

–4.39

2170

4.36

–8.34

1.52

–4.50

2140

4.45

–8.53

1.55

–4.61

2110

4.55

–8.74

1.58

–4.72

2080

4.67

–8.95

1.62

–4.84

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PTFB211501EV1R0XTMA1 Datasheet(PDF) 5 Page - Infineon Technologies AG

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