PTFB211501EF datasheet(2/13 Pages) INFINEON

Part #	PTFB211501EF

Description	Thermally-Enhanced High Power RF LDMOS FETs

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTFB211501E

PTFB211501F

Data Sheet

2 of 13

Rev. 03.1, 2016-06-14

RF Characteristics (cont.)

Two-tone Measurement (not subject to production test - verified by design / characterization in Infineon test fixture)

VDD = 30 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

—

18

—

dB

Drain Efficiency

ηD

—

40

—

%

Intermodulation Distortion

IMD

—

–30

—

dBc

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 µA

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

µA

VDS = 63 V, VGS = 0 V

IDSS

—

10.0

µA

On-State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.08

—

Ω

Operating Gate Voltage

VDS = 30 V, IDQ = 1.2 A

VGS

1.6

2.1

3.0

V

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–6 to +10

V

Junction Temperature

TJ

200

°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C, 150 W CW)

RθJC

0.29

°C/W

Ordering Information

Type and Version

Ordering Code

Package Description

Shipping

PTFB211501E V1 R0

PTFB211501EV1R0XTMA1

H-36248-2, bolt-down

Tape & Reel, 50 pcs

PTFB211501E V1 R250 PTFB211501EV1R250XTMA1 H-36248-2, bolt-down

Tape & Reel, 250 pcs

PTFB211501F V1 R0

PTFB211501FV1R0XTMA1

H-37248-2, earless flange

Tape & Reel, 50pcs

PTFB211501F V1 R250 PTFB211501FV1R250XTMA1 H-37248-2, earless flange

Tape & Reel, 250 pcs

*See Infineon distributor for future availability.

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