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TC1550TG-G Datasheet(PDF) 3 Page - Supertex, Inc |
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TC1550TG-G Datasheet(HTML) 3 Page - Supertex, Inc |
3 / 5 page 3 TC1550 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com P-Channel Switching Waveforms and Test Circuit RGEN Input Pulse Generator VDD RL D.U.T. OUTPUT 0V -10V 0V VDD td(OFF) Input Output tr tf td(ON) t(ON ) t(OFF) 90% 10% 90% 10% 10% 90% Sym Parameter Min Typ Max Units Conditions BV DSS Drain-to-source breakdown voltage -500 - - V V GS = 0V, ID = -1.0mA V GS(th) Gate threshold voltage -2.0 - -4.5 V V GS = VDS, ID = -1.0mA ΔV GS(th) Change in V GS(th) with temperature - 3.5 6.0 mV/OC V GS = VDS, ID = -1.0mA I GSS Gate body leakage current - - 100 nA V GS = ±20V, VDS = 0V I DSS Zero gate voltage drain current - - -10 µA V GS = 0V, VDS = Max Rating - - -1.0 mA V DS = 0.8 Max Rating, V GS = 0V, TA = 125°C I D(ON) On-state drain current - -90 - mA V GS = -5.0V, VDS = -25V -100 -240 - V GS = -10V, VDS = -25V R DS(ON) Static drain-to-source on-state resistance - 85 - Ω V GS = -5.0V, ID = -5.0mA - 80 125 V GS = -10V, ID = -10mA ΔR DS(ON) Change in R DS(ON) with temperature - 0.85 - %/OC V GS = -10V, ID = -10mA G FS Forward transconductance 25 40 - mmho V DS = -25V, ID = -10mA C ISS Input capacitance - 40 70 pF V GS = 0V, V DS = -25V, f = 1.0MHz C OSS Common source output capacitance - 10 20 C RSS Reverse transfer capacitance - 3.0 10 t d(ON) Turn-on delay time - 5.0 10 ns V DD = -25V, I D = -100mA, R GEN = 25Ω t r Rise time - 8.0 10 t d(OFF) Turn-off delay time - 8.0 15 t f Fall time - 5.0 16 V SD Diode forward voltage drop - -0.8 -1.5 V V GS = 0V, ISD = -100mA t rr Reverse recovery time - 200 - ns V GS = 0V, ISD = -100mA P-Channel Electrical Characteristics (T A = 25°C unless otherwise specified) Notes: All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) All AC parameters sample tested. 1. 2. |
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