XP151A13A0MR-G

Power MOSFET

PRODUCTS

PACKAGE

ORDER UNIT

XP151A13A0MR

SOT-23

3,000/Reel

XP151A13A0MR-G

(*)

SOT-23

3,000/Reel

PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Vdss

20

V

Gate - Source Voltage

Vgss

±8

V

Drain Current

(DC)

Id

1

A

Drain Current

(Pulse)

Idp

4

A

Reverse Drain Current

Idr

1

A

Channel Power Dissipation *

Pd

0.5

W

Channel Temperature

Tch

150

℃

Storage Temperature

Tstg

-55~150

℃

■GENERAL DESCRIPTION

The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching

characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.

■APPLICATIONS

●Notebook PCs

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

■FEATURES

Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V

: Rds(on) = 0.14Ω@ Vgs = 2.5V

: Rds(on) = 0.25Ω@ Vgs = 1.5V

Ultra High-Speed Switching

Gate Protect Diode Built-in

Driving Voltage

: 1.5V

N-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-23

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

MARKING

■PRODUCT NAMES

■ABSOLUTE MAXIMUM RATINGS

■EQUIVALENT CIRCUIT

Ta = 25℃

* When implemented on a ceramic PCB

G：Gate

S：Source

D：Drain

1 1

3

x

* x represents production lot number.

being fully RoHS compliant.

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