16W Power Transistor

CHK8015-99F

Ref. : DSCHK80156315 - 10 Nov 16

5/8

Specifications subject to change without notice

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com

Elementary Cell Maximum Gain & Stability Characteristics

Elementary Cell Load Pull Performances

The impedances are chosen as a trade-off between Output Power, PAE and Stability of the

device. Second harmonic of output load has been tuned.

These values are given in the bonding pads reference plan.

Frequency

(GHz)

Zs

Zl

Gain (dB)

(%)

Pout (W)

(W)

3

15 + j18

60 + j65

12.8

72

4.9

5.3

6

8.2 + j14.8

24.8 + j51.7

12.4

69

4.4

5

9

2.8 + j6.4

11.7 + j33.7

10.8

68

4.7

5.1

12

2.1 + j3.5

8 + j24

10

52

3.8

4.8

15

1.87 + j0

5 + j17.3

8.6

50

3.6

4.7

18

1.7

– j3.1

4 + j12.7

7.6

46

3.6

4.8

0

1

2

3

4

5

6

7

0

5

10

15

20

25

30

35

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

Frequency (GHz)

K Factor

MAG

K Factor

MAG

Zl

Zs