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TMS28F010A-12C4FME Datasheet(PDF) 8 Page - Texas Instruments |
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TMS28F010A-12C4FME Datasheet(HTML) 8 Page - Texas Instruments |
8 / 22 page TMS28F010A 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 command definitions read command Memory contents can be accessed while VPP is high or low. When VPP is high, writing 00h into the command register invokes the read operation. When the device is powered up, the default contents of the command register are 00h and the read operation is enabled. The read operation remains enabled until a different valid command is written to the command register. algorithm-selection mode command The algorithm-selection mode is activated by writing 90h into the command register. The manufacturer equivalent code (89h) is identified by the value read from address location 0000h, and the device equivalent code (B4h) is identified by the value read from address location 0001h. set-up-erase/erase commands The erase-algorithm initiates with E = VIL, W = VIL, G = VIH, VPP = VPPH, and VCC = 5 V. To enter the erase mode, write the set-up-erase command, 20h, into the command register. After the TMS28F010A is in the erase mode, writing a second erase command, 20h, into the command register invokes the erase operation. The erase operation begins on the rising edge of W and ends on the rising edge of the next W. The erase operation requires 10 ms to complete before the erase-verify command, A0h, can be loaded. Maximum erase timing is controlled by the internal stop timer. When the stop timer terminates the erase operation, the device enters an inactive state and remains inactive until a valid erase verify, read, or reset command is received. erase-verify command All bytes must be verified following an erase operation. After the erase operation is complete, an erased byte can be verified by writing the erase-verify command, A0h, into the command register. This command causes the device to exit the erase mode on the rising edge of W. The address of the byte to be verified is latched on the falling edge of W. The erase-verify operation remains enabled until a valid command is written to the command register. To determine whether or not all the bytes have been erased, the TMS28F010A applies a margin voltage to each byte. If FFh is read from the byte, all bits in the designated byte have been erased. The erase-verify operation continues until all of the bytes have been verified. If FFh is not read from a byte, an additional erase operation needs to be executed. Figure 2 shows the combination of commands and bus operations for electrically erasing the TMS28F010A. set-up-program/program commands The programming algorithm initiates with E = VIL, W = VIL, G = VIH, VPP = VPPH, and VCC = 5 V. To enter the programming mode, write the set-up-program command, 40h, into the command register. The programming operation is invoked by the next write-enable pulse. Addresses are latched internally on the falling edge of W, and data is latched internally on the rising edge of W. The programming operation begins on the rising edge of W and ends on the rising edge of the next W pulse. The program operation requires 10 µs for completion before the program-verify command, C0h, can be loaded. Maximum program timing is controlled by the internal stop timer. When the stop timer terminates the program operation, the device enters an inactive state and remains inactive until a valid program-verify, read, or reset command is received. |
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