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NB3N200S Datasheet(PDF) 6 Page - ON Semiconductor

Part # NB3N200S
Description  3.3 V Differential Multipoint Low Voltage M-LVDS Driver Receiver
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NB3N200S Datasheet(HTML) 6 Page - ON Semiconductor

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NB3N200S
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Table 7. RECEIVER AC CHARACTERISTICS VCC = 3.3
±10% V( 3.0 to 3.6 V), GND = 0 V, TA = −40°C to +85°C (Note 7)
Symbol
Characteristic
Min
Typ
Max
Unit
tPLH / tPHL
Propagation Delay (See Figure 12)
2
4
6
ns
tPHZ / tPLZ
Disable Time HIGH or LOW state to High Impedance (See Figure 13)
10
ns
tPZH / tPZL
Enable Time High Impedance to HIGH or LOW state (See Figure 13)
15
ns
tSK(P)
Pulse Skew (|tPLH − tPHL|) (See Figure 12) CL = 5 pF
Type 1
Type 2
100
300
300
500
ps
tSK(PP)
Device to Device Skew similar path and conditions (See Figure 12) CL = 5 pF
1
ns
tJIT(PER)
Period Jitter RMS, 100 MHz (Source: VID = 200 mVpp for 201 and 203, VID =
400 mVpp for 206 and 207, VCM =1 V, tr/tf 0.5 ns, 10 and 90 % points, 30k samples.
Source jitter de−embedded from Output values ) (See Figure 14)
4
7
ps
tJIT(PP)
Peak−to−peak Jitter, 200 Mbps 215−1 PRBS (Source tr/tf 0.5 ns, 10% and 90% points,
100k samples. Source jitter de−embedded from Output values) (See Figure 14)
Type 1
Type 2
300
450
700
800
ps
tr / tf
Differential Output rise and fall times (See Figure 12) CL = 15 pF
1
2.3
ns
7. Typ value at 25
°C and 3.3 VCC supply voltage. .
Figure 3. Driver Voltage and Current Definitions
A. All resistors are 1% tolerance.
Figure 4. Differential Output Voltage Test Circuit


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