K6T4016V3C-RB10 datasheet(6/9 Pages) SAMSUNG

Part #	K6T4016V3C-RB10

Description	256Kx16 bit Low Power and Low Voltage CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 9 page

K6T4016V3C, K6T4016U3C Family

CMOS SRAM

Revision 2.01

October 2001

6

Address

Data Out

Previous Data Valid

Data Valid

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL)

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

tRC

CS

Address

UB, LB

OE

Data out

tAA

tRC

tOH

tAA

tCO

tBA

tOE

tOLZ

tBLZ

tLZ

tOHZ

tBHZ

tHZ

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

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K6T4016V3C-RB10 Datasheet(PDF) 6 Page - Samsung semiconductor

K6T4016V3C-RB10 Datasheet(HTML) 6 Page - Samsung semiconductor

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