K6T4016V3C-TB85 datasheet(4/9 Pages) SAMSUNG

Part #	K6T4016V3C-TB85

Description	256Kx16 bit Low Power and Low Voltage CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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4 / 9 page

K6T4016V3C, K6T4016U3C Family

CMOS SRAM

Revision 2.01

October 2001

4

RECOMMENDED DC OPERATING CONDITIONS1)

Note:

1. Commercial Product: TA=0 to 70

°C, otherwise specified

Industrial Product: TA=-40 to 85

°C, otherwise specified

2. Overshoot: VCC+2.0V in case of pulse width

≤ 30ns

3. Undershoot: -2.0V in case of pulse width

≤ 30ns

4. Overshoot and undershoot are sampled, not 100% tested.

Item

Symbol

Product

Min

Typ

Max

Unit

Supply voltage

Vcc

K6T4016V3C Family

K6T4016U3C Family

3.0

2.7

3.3

3.0

3.6

3.3

V

Ground

Vss

All Family

0

V

Input high voltage

VIH

K6T4016V3C, K6T4016U3C Family

2.2

-

Vcc+0.32)

V

Input low voltage

VIL

K6T4016V3C, K6T4016U3C Family

-0.33)

-

0.6

V

CAPACITANCE1) (f=1MHz, TA=25

°C)

1. Capacitance is sampled, not 100% tested

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

-

8

pF

Input/Output capacitance

CIO

VIO=0V

-

10

pF

DC AND OPERATING CHARACTERISTICS

1. Industrial product = 20

µA

2. Cycle time = 70ns

Item

Symbol

Test Conditions

Min

Typ

Max

Unit

Input leakage current

ILI

VIL=Vss to Vcc

-1

-

1

µA

Output leakage current

ILO

CS=VIH or OE=VIH or WE=VIL VIO=Vss to Vcc

-1

-

1

µA

Operating power supply current

ICC

IIO=0mA, CS=VIL, VIN=VIL or VIH, Read

-

4

mA

Average operating current

ICC1

Cycle time=1

µs, 100% duty, IIO=0mA CS≤0.2V,

VIN

≤0.2V or VIN≥Vcc-0.2V

-

6

mA

ICC2

Cycle time=Min2), 100% duty, IIO=0mA, CS=VIL,

VIN=VIH or VIL

-

45

mA

Output low voltage

VOL

IOL=2.1mA

-

0.4

V

Output high voltage

VOH

IOH=-1.0mA

2.4

-

V

Standby Current(TTL)

ISB

CS=VIH, Other inputs=VIL or VIH

-

0.3

mA

Standby Current(CMOS)

ISB1

CS

≥Vcc-0.2V, Other inputs=0~Vcc

-

151)

µA

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