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K6T4016V3C Datasheet(PDF) 2 Page - Samsung semiconductor

Part No. K6T4016V3C
Description  256Kx16 bit Low Power and Low Voltage CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T4016V3C Datasheet(HTML) 2 Page - Samsung semiconductor

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K6T4016V3C, K6T4016U3C Family
CMOS SRAM
Revision 2.01
October 2001
2
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6T4016V3C and K6T4016U3C families are fabricated by
SAMSUNG
′s advanced CMOS process technology. The fami-
lies support various operating temperature ranges and have
various package types for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
FEATURES
• Process Technology: TFT
• Organization: 256K x16
• Power Supply Voltage
K6T4016V3C Family: 3.0~3.6V
K6T4016U3C Family: 2.7~3.3V
• Low Data Retention Voltage: 2V(Min)
• Three State Outputs
• Package Type: 44-TSOP2-400F/R
PIN DESCRIPTION
Name
Function
Name Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
LB
Lower Byte (I/O1~8)
A0~A17
Address Inputs
UB
Upper Byte (I/O9~16)
I/O1~I/O16 Data Input/Output
NC
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
K6T4016V3C-B
Commercial(0~70
°C)
3.0~3.6V
551)/701)/85/100
15
µA
45mA
44-TSOP2-400F/R
K6T4016U3C-B
2.7~3.3V
701)/85/100
K6T4016V3C-F
Industrial(-40~85
°C)
3.0~3.6V
20
µA
K6T4016U3C-F
2.7~3.3V
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
44-TSOP2
Forward
44-TSOP2
Reverse
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A13
A12
A11
A12
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
A5 A6 A7 A8 A9
A11
A10
A0
A1
A2
A3
A4
A13
A14
A15
WE
OE
UB
CS
I/O1~I/O8
A16
Data
cont
Data
cont
Data
cont
LB
I/O9~I/O16
Vcc
Vss
A17
A12
Precharge circuit.
Memory array
1024 rows
256
×16 columns
I/O Circuit
Column select
Control
logic


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