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K6T4016V3C Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. K6T4016V3C
Description  256Kx16 bit Low Power and Low Voltage CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T4016V3C Datasheet(HTML) 6 Page - Samsung semiconductor

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K6T4016V3C, K6T4016U3C Family
CMOS SRAM
Revision 2.01
October 2001
6
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL)
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
tRC
CS
Address
UB, LB
OE
Data out
tAA
tRC
tOH
tOH
tAA
tCO
tBA
tOE
tOLZ
tBLZ
tLZ
tOHZ
tBHZ
tHZ
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.


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