 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
K6F1616T6B-F Datasheet(PDF) 5 Page - Samsung semiconductor |
|
||||||||||||||||||||||||||||||
K6F1616T6B-F Datasheet(HTML) 5 Page - Samsung semiconductor |
|
|
5 / 10 page  K6F1616T6B Family Revision 1.0 August 2003 5 CMOS SRAM AC OPERATING CONDITIONS TEST CONDITIONS(Test Load and Input/Output Reference) Input pulse level: 0.2V to Vcc-0.2V Input rising and falling time: 5ns Input and output reference voltage:1.5V Output load(see right): CL=100pF+1TTL CL=30pF+1TTL AC CHARACTERISTICS (Vcc=2.7~3.6V, TA=-40 to 85 °C) Parameter List Symbol Speed Bins Units 55ns 70ns Min Max Min Max Read Read cycle time tRC 55 - 70 - ns Address access time tAA - 55 - 70 ns Chip select to output tCO - 55 - 70 ns Output enable to valid output tOE - 25 - 35 ns LB, UB valid to data output tBA - 55 - 70 ns Chip select to low-Z output tLZ 10 - 10 - ns Output enable to low-Z output tOLZ 5 - 5 - ns LB, UB enable to low-Z output tBLZ 10 - 10 - ns Output hold from address change tOH 10 - 10 - ns Chip disable to high-Z output tHZ 0 20 0 25 ns OE disable to high-Z output tOHZ 0 20 0 25 ns UB, LB disable to high-Z output tBHZ 0 20 0 25 ns Write Write cycle time tWC 55 - 70 - ns Chip select to end of write tCW 45 - 60 - ns Address set-up time tAS 0 - 0 - ns Address valid to end of write tAW 45 - 60 - ns Write pulse width tWP 40 - 50 - ns Write recovery time tWR 0 - 0 - ns Write to output high-Z tWHZ 0 20 0 20 ns Data to write time overlap tDW 25 - 30 - ns Data hold from write time tDH 0 - 0 - ns End write to output low-Z tOW 5 - 5 - ns LB, UB valid to end of write tBW 45 - 60 - ns CL1) 1. Including scope and jig capacitance R22) R12) VTM3) 2. R1=3070 Ω, R2=3150Ω 3. VTM =2.8V DATA RETENTION CHARACTERISTICS 1. 1) CS1 ≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or 2) 0 ≤CS2≤0.2V(CS2 controlled) 2. Typical value are measured at TA=25 °C and not 100% tested. Item Symbol Test Condition Min Typ Max Unit Vcc for data retention VDR CS1 ≥Vcc-0.2V1), VIN≥0V 1.5 - 3.6 V Data retention current IDR Vcc=1.5V, CS1 ≥Vcc-0.2V1), VIN≥0V - 1.02) 10 µA Data retention set-up time tSDR See data retention waveform 0 - - ns Recovery time tRDR tRC - - |
Similar Part No. - K6F1616T6B-F |
|
Similar Description - K6F1616T6B-F |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
