Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

K6F1616T6B Datasheet(PDF) 2 Page - Samsung semiconductor

Part No. K6F1616T6B
Description  1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6F1616T6B Datasheet(HTML) 2 Page - Samsung semiconductor

  K6F1616T6B Datasheet HTML 1Page - Samsung semiconductor K6F1616T6B Datasheet HTML 2Page - Samsung semiconductor K6F1616T6B Datasheet HTML 3Page - Samsung semiconductor K6F1616T6B Datasheet HTML 4Page - Samsung semiconductor K6F1616T6B Datasheet HTML 5Page - Samsung semiconductor K6F1616T6B Datasheet HTML 6Page - Samsung semiconductor K6F1616T6B Datasheet HTML 7Page - Samsung semiconductor K6F1616T6B Datasheet HTML 8Page - Samsung semiconductor K6F1616T6B Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
K6F1616T6B Family
Revision 1.0
August 2003
2
CMOS SRAM
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The K6F1616T6B families are fabricated by SAMSUNG
′s
advanced full CMOS process technology. The families support
industrial operating temperature ranges. The families also sup-
port low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
• Process Technology: Full CMOS
• Organization: 1M x16
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00
Name
Function
Name
Function
CS1, CS2 Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O9~16)
A0~A19
Address Inputs
LB
Lower Byte(I/O1~8)
I/O1~I/O16 Data Inputs/Outputs
NC
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical value is measured at VCC=3.3V, TA=25
°C and not 100% tested.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(ISB1, Typ.)
Operating
(ICC1, Max)
K6F1616T6B-F
Industrial(-40~85
°C)
2.7~3.6V
551)/70ns
5
µA2)
5mA
48-TSOP1-1220F
48-TBGA - 7.00x7.00
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O1~I/O8
Data
cont
Data
cont
Data
cont
I/O9~I/O16
Vcc
Vss
Precharge circuit.
Memory
Cell
Array
I/O Circuit
Column select
PIN DESCRIPTION
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
48-TSOP1-1220F
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
NC
UB
LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
NC
Vss
I/O16
I/O8
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
Vcc
I/O12
I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
OE
Vss
CS1
A0
CS2
48-TBGA: Top View (Ball Down)
LB
OE
A0
A1
A2
CS2
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
Vss
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
NC
1
2
3
4
5
6
A
B
C
D
E
F
G
H


Html Pages

1  2  3  4  5  6  7  8  9  10 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn