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K6F1616T6B Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. K6F1616T6B
Description  1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6F1616T6B Datasheet(HTML) 4 Page - Samsung semiconductor

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K6F1616T6B Family
Revision 1.0
August 2003
4
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Note:
1. TA=-40 to 85
°C, otherwise specified
2. Overshoot: VCC+2.0V in case of pulse width
≤20ns.
3. Undershoot: -2.0V in case of pulse width
≤20ns.
4. Overshoot and Undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
2.7
3.0/3.3
3.6
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.22)
V
Input low voltage
VIL
-0.23)
-
0.6
V
CAPACITANCE1) (f=1MHz, TA=25
°C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
1. Typical values are measured at VCC=3.3V, TA=25
°C and not 100% tested.
Item
Symbol
Test Conditions
Min
Typ1)
Max
Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,
VIO=Vss to Vcc
-1
-
1
µA
Average operating current
ICC1
Cycle time=1
µs, 100%duty, IIO=0mA, CS1≤0.2V, LB≤0.2V
or/and UB
≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
-
-
5
mA
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH
70ns
-
-
25
mA
55ns
-
-
30
Output low voltage
VOL
IOL = 2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH = -1.0mA
2.4
-
-
V
Standby Current (CMOS)
ISB1
Other input =0~Vcc
1) CS1
≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
2) 0V
≤CS2≤0.2V(CS2 controlled)
-
5.0
15
µA


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