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IXGH25N120 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXGH25N120 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 1996 IXYS All rights reserved TO-247 AD G C E G = Gate, C = Collector, E = Emitter, TAB = Collector V CES I C25 V CE(sat) Low V CE(sat) IXGH 25 N120 1200 V 50 A 3 V High speed IGBT IXGH 25 N120A 1200 V 50 A 4 V Features l International standard package JEDEC TO-247 AD l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies l Capacitor discharge systems l Solid state relays Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) l High power density 92783D (3/96) Symbol Test Conditions Maximum Ratings V CES T J = 25 °C to 150°C 1200 V V CGR T J = 25 °C to 150°C; R GE = 1 MΩ 1200 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25 °C50 A I C90 T C = 90 °C25 A I CM T C = 25 °C, 1 ms 100 A SSOA V GE = 15 V, T VJ = 125°C, RG = 33 Ω I CM = 50 A (RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V CES P C T C = 25 °C 200 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C M d Mounting torque (M3) 1.13/10 Nm/lb.in. Weight 6g Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. BV CES I C = 3 mA, V GE = 0 V 1200 V V GE(th) I C = 250 µA, V CE = VGE 2.5 6 V I CES V CE = 0.8 • V CES T J = 25°C 250 µA V GE = 0 V T J = 125°C1 mA I GES V CE = 0 V, V GE = ±20 V ±100 nA V CE(sat) I C = I C90, VGE = 15 V 25N120 3 V 25N120A 4 V |
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